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Alternative TitleThe Single Event Effects TCAD Numerical Simulation of 3D Modeling Method
陈睿; 纪冬梅; 封国强; 沈忱; 韩建伟; 北京8701信箱
Source Publication核电子学与探测技术
Keyword单粒子效应 数值仿真 Tcad 器件模型 几何效应 阱接触
Other AbstractIt is the first in the series of papers on simulating the SEE(Single Event Effects) in semiconductor devices with controllable accuracy using TCAD simulation tools.In the paper,two topics regarding the construction of 3D models for simulation are discussed.Firstly,through simulating the transient current waveform of a N+/P junction diode with well structure,the dependence of the current and collected charge upon the geometric dimensions of the simulated device model is investigated,based on which a practical guideline is proposed for determining the appropriate size of the model for accurate simulation of SEE.Secondly,the impact of the well-contact's location on the current wave form and charge collection is discussed,and the importance of correctly modeling the well-contact is highlighted.
Funding Project中国科学院空间科学与应用研究中心
Document Type期刊论文
Corresponding Author北京8701信箱
Recommended Citation
GB/T 7714
陈睿,纪冬梅,封国强,等. 单粒子效应TCAD数值仿真的三维建模方法[J]. 核电子学与探测技术,2013,33(3):289-295.
APA 陈睿,纪冬梅,封国强,沈忱,韩建伟,&北京8701信箱.(2013).单粒子效应TCAD数值仿真的三维建模方法.核电子学与探测技术,33(3),289-295.
MLA 陈睿,et al."单粒子效应TCAD数值仿真的三维建模方法".核电子学与探测技术 33.3(2013):289-295.
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