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Feng, Y. C.; You, D. W.; Kuang, Y. Z.; 北京8701信箱
Source PublicationReview of scientific instruments
AbstractHigh-energy and intense beam current broad beam ion sources have been developed for ion implantation and dynamic recoil mixing at CSSAR. The sources can be operated over beam energy and current ranges of 3-120 keV and 5-70 mA, respectively. For sputter coating of thin films, a series of focusing beam ion sources with different structures has also been developed. The energy and current range from 1-10 keV and 100-350 mA for different applications. For some applications, low-energy (below 100 eV) ion beams are required. CSSAR has developed a 6-cm-diam broad beam ion source. The source can be operated at beam energy 10-70 eV, and the beam current 15-80 mA has been extracted. Typical structures and operational data are given for the sources mentioned above. Recently a new type of broad beam metal ion source (Electron Beam Evaporation Metal Ion Source EBE) is being studied. Ion beams of several kinds of materials such as C, W, Ta, Mo, Cr, Ti, B, Cu, etc. have been extracted from the source. Typical operation conditions and ion yields are given in this paper.
Conference Name5th International Conference on Ion Sources
Conference Date1994
Conference PlaceBeijing, Peoples R China
Indexed ByCPCI
Document Type会议论文
Corresponding Author北京8701信箱
Recommended Citation
GB/T 7714
Feng, Y. C.,You, D. W.,Kuang, Y. Z.,et al. DEVELOPMENT OF BROAD-BEAM ION SOURCES AT CSSAR[C]. WOODBURY:Amer Inst Physics,1994:1304-1306.
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