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SEU ground and flight data in static random access memories
Liu, J.; Duan, J. L.; Hou, M. D.; Sun, Y. M.; Yao, H. J.; Mo, D.; Zhang, Q. X.; Wang, Z. G.; Jin, Y. F.; Cai, J. R.; Ye, Z. H.; Han, J. W.; Lin, Y. L.; Huang, Z.; 北京8701信箱
Department其他
Source PublicationNuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms
2006
Volume245Issue:1Pages:342-345
ISSN0168-583X
Language英语
KeywordSingle Event Effects Heavy Ion simulatIon Microcircuit
AbstractThis paper presents the vulnerabilities of single event effects (SEEs) simulated by heavy ions on ground and observed on SJ-5 research satellite in space for static random access memories (SRAMs). A single event upset (SEU) prediction code has been used to estimate the proton-induced upset rates based on the ground test curve of SEU cross-section versus heavy ion linear energy transfer (LET). The result agrees with that of the flight data.
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.nssc.ac.cn/handle/122/1699
Collection其他部室
Corresponding Author北京8701信箱
Recommended Citation
GB/T 7714
Liu, J.,Duan, J. L.,Hou, M. D.,et al. SEU ground and flight data in static random access memories[J]. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms,2006,245(1):342-345.
APA Liu, J..,Duan, J. L..,Hou, M. D..,Sun, Y. M..,Yao, H. J..,...&北京8701信箱.(2006).SEU ground and flight data in static random access memories.Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms,245(1),342-345.
MLA Liu, J.,et al."SEU ground and flight data in static random access memories".Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms 245.1(2006):342-345.
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