NSSC OpenIR  > 保障部/保障与试验验证中心
Experimental study on single event latchup of SRAM K6R4016V1D and its protection
Yu, Yong-Tao; Feng, Guo-Qiang; Chen, Rui; Shangguan, Shi-Peng; Han, Jian-Wei; 北京8701信箱
Department保障部/保障与试验验证中心
Source PublicationYuanzineng Kexue Jishu/Atomic Energy Science and Technology
2012
Volume46Issue:SUPPL. 1Pages:587-591
ISSN1000-6931
Language中文
AbstractPulsed laser single event effects (PLSEE) facility was used to study single event latchup sensitivities of Samsung SRAM K6R4016V1D. The SEL threshold energy, cross section and current of the SRAM were obtained from the test. Current-limiting resistance and power cycling, which are commonly used in the engineering application, were also studied for the SRAM. The results show that SEL threshold energy is very low and SEL saturation cross section is very high for the SRAM. The SRAM is extremely susceptible to the radiation in the space.
Indexed ByEI
Funding Project中国科学院空间科学与应用研究中心
Document Type期刊论文
Identifierhttp://ir.nssc.ac.cn/handle/122/2857
Collection保障部/保障与试验验证中心
Corresponding Author北京8701信箱
Recommended Citation
GB/T 7714
Yu, Yong-Tao,Feng, Guo-Qiang,Chen, Rui,et al. Experimental study on single event latchup of SRAM K6R4016V1D and its protection[J]. Yuanzineng Kexue Jishu/Atomic Energy Science and Technology,2012,46(SUPPL. 1):587-591.
APA Yu, Yong-Tao,Feng, Guo-Qiang,Chen, Rui,Shangguan, Shi-Peng,Han, Jian-Wei,&北京8701信箱.(2012).Experimental study on single event latchup of SRAM K6R4016V1D and its protection.Yuanzineng Kexue Jishu/Atomic Energy Science and Technology,46(SUPPL. 1),587-591.
MLA Yu, Yong-Tao,et al."Experimental study on single event latchup of SRAM K6R4016V1D and its protection".Yuanzineng Kexue Jishu/Atomic Energy Science and Technology 46.SUPPL. 1(2012):587-591.
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