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Alternative TitleExperimental Study on Single Event Effects of Deep Sub-micron SRAM Simulated by Pulsed Laser
上官士鹏; 封国强; 马英起; 韩建伟
Source Publication原子能科学技术
Keyword脉冲激光 单粒子翻转效应 单粒子闩锁效应 单粒子微闩锁效应
Other AbstractPulsed laser single event effects(PLSEE) facility was used to study single event effect(SEE) of IDT 0.13 mum IDT71V416S SRAM.Under working voltage of 3.3 V,single event upset(SEU) threshold,SEU cross section and single event latchup(SEL) threshold and their relationships with their configuration data and work status were got.SEU results show that this SRAM is extremely susceptible to SEU and its threshold is consistent with heavy ions and proton test result.Meanwhile,this SRAM is susceptible to multiple bits upset(MBU),and most of them are 2 bits upset.The percentage of 2 bits upset is growing with the laser energy,which is also consistent with heavy ions test result.SEL results show that SEL occurs at specific regions.Micro-SEL phenomenon was observed and its influence on SEE hardening design was analyzed.
Indexed ByEI ; CSCD
Funding Project中国科学院空间科学与应用研究中心
Citation statistics
Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
Recommended Citation
GB/T 7714
上官士鹏,封国强,马英起,等. 深亚微米SRAM器件单粒子效应的脉冲激光辐照试验研究[J]. 原子能科学技术,2012,46(8):1019-1024.
APA 上官士鹏,封国强,马英起,&韩建伟.(2012).深亚微米SRAM器件单粒子效应的脉冲激光辐照试验研究.原子能科学技术,46(8),1019-1024.
MLA 上官士鹏,et al."深亚微米SRAM器件单粒子效应的脉冲激光辐照试验研究".原子能科学技术 46.8(2012):1019-1024.
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