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SEE characteristics of small feature size devices by using laser backside testing
Feng, Guoqiang; Shangguan, Shipeng; Ma, Yingqi; Han, Jianwei; Feng, G. (gqfeng@cssar.ac.cn)
Department保障部/保障与试验验证中心
Source PublicationJournal of Semiconductors
2012
Volume33Issue:1
ISSN1674-4926
Language英语
AbstractThis paper presents single event upset (SEU) and single event latch-up (SEL) characteristics of small feature size devices by laser backside testing method, which is dedicated to dealing with the increasing metal layers on the front side of integrated circuits. The influence of test data pattern on SEU threshold and cross-section is investigated. The supply current state of micro latch-up for deep sub-micron SRAM is described. The laser energy thresholds were correlated to heavy ion thresholds LET to determine an empirical relationship between laser energy threshold and heavy ion LET. This empirical relationship was used to estimate the equivalent laser LETs for devices fabricated in small feature sizes. Moreover, the SEU of a Power PC CPU fabricated with 90 nm SOI CMOS process has been tested, which indicates that the laser backside method could be used to evaluate SOI small feature size devices. © 2012 Chinese Institute of Electronics.; This paper presents single event upset (SEU) and single event latch-up (SEL) characteristics of small feature size devices by laser backside testing method, which is dedicated to dealing with the increasing metal layers on the front side of integrated circuits. The influence of test data pattern on SEU threshold and cross-section is investigated. The supply current state of micro latch-up for deep sub-micron SRAM is described. The laser energy thresholds were correlated to heavy ion thresholds LET to determine an empirical relationship between laser energy threshold and heavy ion LET. This empirical relationship was used to estimate the equivalent laser LETs for devices fabricated in small feature sizes. Moreover, the SEU of a Power PC CPU fabricated with 90 nm SOI CMOS process has been tested, which indicates that the laser backside method could be used to evaluate SOI small feature size devices. © 2012 Chinese Institute of Electronics.
Indexed ByEI
Funding Project中国科学院空间科学与应用研究中心
Document Type期刊论文
Identifierhttp://ir.nssc.ac.cn/handle/122/2863
Collection保障部/保障与试验验证中心
Corresponding AuthorFeng, G. (gqfeng@cssar.ac.cn)
Recommended Citation
GB/T 7714
Feng, Guoqiang,Shangguan, Shipeng,Ma, Yingqi,et al. SEE characteristics of small feature size devices by using laser backside testing[J]. Journal of Semiconductors,2012,33(1).
APA Feng, Guoqiang,Shangguan, Shipeng,Ma, Yingqi,Han, Jianwei,&Feng, G. .(2012).SEE characteristics of small feature size devices by using laser backside testing.Journal of Semiconductors,33(1).
MLA Feng, Guoqiang,et al."SEE characteristics of small feature size devices by using laser backside testing".Journal of Semiconductors 33.1(2012).
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