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Simulation of electrical characteristics of InP/In0.24Ga0.76As0.73Sb0.27/In0.53Ga0.47As double heterojunction bipolar transistor
Zhou, Xingbao; Zhou, Shouli; Wen, Hao; Ren, Hongliang; Huang, Guiyong; Xu, Jun; Wang, Yuhua
Department空间技术部
Source PublicationProceedings of the 2014 9th IEEE Conference on Industrial Electronics and Applications, ICIEA 2014
2014
Pages1730-1732
Language英语
ISBN9781479943166
AbstractThe electrical characteristics of InP/In0.24Ga0.76As0.73Sb0.27/In0.53Ga0.47As double heterojunction bipolar transistor (DHBT) are investigated. The study is based on energy balance (EB) transport model and TCAD SILVACO device simulator. InP/In0.24Ga0.76As0.73Sb0.27 DHBT have a low Emitter-Base conduction band discontinuity ΔEC and a minimum base bandgap energy EG among the entire composition range of InxGa1-xAs1-ySby material lattice matched to InP. A low Emitter-Base turn on voltage VBE and a low collector offset voltage VCE, as well as a high current gain cut-off frequency, are achieved.
Conference Name9th IEEE Conference on Industrial Electronics and Applications, ICIEA 2014
Conference DateJune 9, 2014 - June 11, 2014
Conference Place188-200 Moganshan Road, Hangzhou, China
Indexed ByEI
Document Type会议论文
Identifierhttp://ir.nssc.ac.cn/handle/122/4353
Collection空间技术部
Recommended Citation
GB/T 7714
Zhou, Xingbao,Zhou, Shouli,Wen, Hao,et al. Simulation of electrical characteristics of InP/In0.24Ga0.76As0.73Sb0.27/In0.53Ga0.47As double heterojunction bipolar transistor[C]:Institute of Electrical and Electronics Engineers Inc.,2014:1730-1732.
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