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Laser SEU sensitivity mapping of deep submicron CMOS SRAM
Yu, Yongtao; Feng, Guoqiang; Chen, Rui; Han, Jianwei; Yu, Y. (yuyongtao10@mails.ucas.ac.cn)
Department保障部/保障与试验验证中心
Source PublicationJournal of Semiconductors
2014
Volume35Issue:6
ISSN1674-4926
Language英语
AbstractThe pulsed laser facility for SEU sensitivity mapping is utilized to study the SEU sensitive regions of a 0.18 μm CMOS SRAM cell. Combined with the device layout micrograph, SEU sensitivity maps of the SRAM cell are obtained. TCAD simulation work is performed to examine the SEU sensitivity characteristics of the SRAM cell. The laser mapping experiment results are discussed and compared with the electron micrograph information of the SRAM cell and the TCAD simulation results. The results present that the test technique is reliable and of high mapping precision for the deep submicron technology device. © 2014 Chinese Institute of Electronics.
Indexed ByEI
Document Type期刊论文
Identifierhttp://ir.nssc.ac.cn/handle/122/4368
Collection保障部/保障与试验验证中心
Corresponding AuthorYu, Y. (yuyongtao10@mails.ucas.ac.cn)
Recommended Citation
GB/T 7714
Yu, Yongtao,Feng, Guoqiang,Chen, Rui,et al. Laser SEU sensitivity mapping of deep submicron CMOS SRAM[J]. Journal of Semiconductors,2014,35(6).
APA Yu, Yongtao,Feng, Guoqiang,Chen, Rui,Han, Jianwei,&Yu, Y. .(2014).Laser SEU sensitivity mapping of deep submicron CMOS SRAM.Journal of Semiconductors,35(6).
MLA Yu, Yongtao,et al."Laser SEU sensitivity mapping of deep submicron CMOS SRAM".Journal of Semiconductors 35.6(2014).
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