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Comparative research on "high currents" induced by single event latch-up and transient-induced latch-up
Chen Rui; Han Jian-Wei; Zheng Han-Sheng; Yu Yong-Tao; Shangguang Shi-Peng; Feng Guo-Qiang; Ma Ying-Qi; Chen, R (reprint author), Chinese Acad Sci, Natl Space Sci Ctr, Beijing 100190, Peoples R China.
Department保障部/保障与试验验证中心
Source PublicationCHINESE PHYSICS B
2015
Volume24Issue:4Pages:46103
ISSN1674-1056
Language英语
KeywordSingle Event Latch-up Transient-induced Latch-up Electro-static Discharge Pulsed Laser
AbstractBy using the pulsed laser single event effect facility and electro-static discharge (ESD) test system, the characteristics of the "high current", relation with external stimulus and relevance to impacted modes of single event latch-up (SEL) and transient-induced latch-up (TLU) are studied, respectively, for a 12-bit complementary metal-oxide semiconductor (CMOS) analog-to-digital converter. Furthermore, the sameness and difference in physical mechanism between "high current" induced by SEL and that by TLU are disclosed in this paper. The results show that the minority carrier diffusion in the PNPN structure of the CMOS device which initiates the active parasitic NPN and PNP transistors is the common reason for the "high current" induced by SEL and for that by TLU. However, for SEL, the minority carrier diffusion is induced by the ionizing radiation, and an underdamped sinusoidal voltage on the supply node (the ground node) is the cause of the minority carrier diffusion for TLU.
Indexed BySCI ; EI
Document Type期刊论文
Identifierhttp://ir.nssc.ac.cn/handle/122/4559
Collection保障部/保障与试验验证中心
Corresponding AuthorChen, R (reprint author), Chinese Acad Sci, Natl Space Sci Ctr, Beijing 100190, Peoples R China.
Recommended Citation
GB/T 7714
Chen Rui,Han Jian-Wei,Zheng Han-Sheng,et al. Comparative research on "high currents" induced by single event latch-up and transient-induced latch-up[J]. CHINESE PHYSICS B,2015,24(4):46103.
APA Chen Rui.,Han Jian-Wei.,Zheng Han-Sheng.,Yu Yong-Tao.,Shangguang Shi-Peng.,...&Chen, R .(2015).Comparative research on "high currents" induced by single event latch-up and transient-induced latch-up.CHINESE PHYSICS B,24(4),46103.
MLA Chen Rui,et al."Comparative research on "high currents" induced by single event latch-up and transient-induced latch-up".CHINESE PHYSICS B 24.4(2015):46103.
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