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单粒子翻转敏感区定位的脉冲激光试验研究
Alternative TitleExperimental Study on Pulsed Laser Single Event Upset Sensitivity Mapping
余永涛; 封国强; 上官士鹏; 陈睿; 韩建伟
Department保障部/保障与试验验证中心
Source Publication原子能科学技术
2015
Volume49Issue:1Pages:176-180
ISSN1000-6931
Language中文
Keyword单粒子效应 敏感区定位 数据类型 翻转截面
Abstract利用脉冲激光单粒子翻转敏感区定位成像系统,对静态随机存储器件IDT71256开展了单粒子翻转敏感区定位的试验研究。为避开器件正面金属层对激光的阻挡,试验采用背面辐照方式进行测试。试验结果表明,存储单元中存储数据类型对器件单粒子翻转的敏感性有较大影响,由测得的单粒子翻转敏感区分布图经处理得到单粒子翻转截面,结果与重离子试验测得的翻转截面数据一致。
Other AbstractThe pulsed laser facility for single event upset(SEU)sensitivity mapping was utilized to study SEU sensitivity mapping of SRAM IDT71256.To avoid the block of the metal layer in the front side of integrated circuit,the backside testing method was used.The experiment results show that the SEU sensitivity of the SRAM cell depends on the pattern of data stored in the memory cell.The SEU sensitivity mapping could be used to construct the corresponding SEU cross section,which is validated by the heavy ion beam test result.
Indexed ByEI ; CSCD
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Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.nssc.ac.cn/handle/122/4718
Collection保障部/保障与试验验证中心
Recommended Citation
GB/T 7714
余永涛,封国强,上官士鹏,等. 单粒子翻转敏感区定位的脉冲激光试验研究[J]. 原子能科学技术,2015,49(1):176-180.
APA 余永涛,封国强,上官士鹏,陈睿,&韩建伟.(2015).单粒子翻转敏感区定位的脉冲激光试验研究.原子能科学技术,49(1),176-180.
MLA 余永涛,et al."单粒子翻转敏感区定位的脉冲激光试验研究".原子能科学技术 49.1(2015):176-180.
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