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Alternative TitleExperimental Study on Pulsed Laser Single Event Upset Sensitivity Mapping
余永涛; 封国强; 上官士鹏; 陈睿; 韩建伟
Source Publication原子能科学技术
Keyword单粒子效应 敏感区定位 数据类型 翻转截面
Other AbstractThe pulsed laser facility for single event upset(SEU)sensitivity mapping was utilized to study SEU sensitivity mapping of SRAM IDT71256.To avoid the block of the metal layer in the front side of integrated circuit,the backside testing method was used.The experiment results show that the SEU sensitivity of the SRAM cell depends on the pattern of data stored in the memory cell.The SEU sensitivity mapping could be used to construct the corresponding SEU cross section,which is validated by the heavy ion beam test result.
Indexed ByEI ; CSCD
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Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
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GB/T 7714
余永涛,封国强,上官士鹏,等. 单粒子翻转敏感区定位的脉冲激光试验研究[J]. 原子能科学技术,2015,49(1):176-180.
APA 余永涛,封国强,上官士鹏,陈睿,&韩建伟.(2015).单粒子翻转敏感区定位的脉冲激光试验研究.原子能科学技术,49(1),176-180.
MLA 余永涛,et al."单粒子翻转敏感区定位的脉冲激光试验研究".原子能科学技术 49.1(2015):176-180.
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