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SRAM K6R4016V1D单粒子闩锁及防护试验研究
Alternative TitleExperimental study on single event latchup of SRAM K6R4016V1D and its protection
余永涛; 封国强; 陈睿; 上官士鹏; 韩建伟
Source Publication原子能科学技术
Volume46Issue:SUPPL. 1Pages:587-591
Keyword脉冲激光 单粒子闩锁效应 限流电阻 断电解除闩锁
Abstract本工作利用脉冲激光单粒子效应 模拟试验装置对三星公司的SRAM K6R4016V1D进行了单粒子闩锁效应试验研究。试验测得了此器件的单粒子闩锁效应脉冲激光能量阈值、闩锁截面曲线和闩锁电流。针对这款器件,还对工 程中防护闩锁过流常用的限流和断电方法进行了试验研究。试验结果表明,该器件具有非常低的单粒子闩锁效应阈值能量和很高的闩锁饱和截面,对空间辐射环境极 其敏感。
Other AbstractPulsed laser single event effects (PLSEE) facility was used to study single event latchup sensitivities of Samsung SRAM K6R4016V1D. The SEL threshold energy, cross section and current of the SRAM were obtained from the test. Current-limiting resistance and power cycling, which are commonly used in the engineering application, were also studied for the SRAM. The results show that SEL threshold energy is very low and SEL saturation cross section is very high for the SRAM. The SRAM is extremely susceptible to the radiation in the space.
Indexed ByEI
Document Type期刊论文
Recommended Citation
GB/T 7714
余永涛,封国强,陈睿,等. SRAM K6R4016V1D单粒子闩锁及防护试验研究[J]. 原子能科学技术,2012,46(SUPPL. 1):587-591.
APA 余永涛,封国强,陈睿,上官士鹏,&韩建伟.(2012).SRAM K6R4016V1D单粒子闩锁及防护试验研究.原子能科学技术,46(SUPPL. 1),587-591.
MLA 余永涛,et al."SRAM K6R4016V1D单粒子闩锁及防护试验研究".原子能科学技术 46.SUPPL. 1(2012):587-591.
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