| A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor | |
| Sun Ya-Bin; Fu Jun; Xu Jun; Wang Yu-Dong; Zhou Wei; Zhang Wei; Cui Jie; Li Gao-Qing; Liu Zhi-Hong; Yu Yong-Tao; Ma Ying-Qi; Feng Guo-Qiang; Han Jian-Wei; Sun, YB (reprint author), Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China. | |
| Department | 保障部/保障与试验验证中心 |
| Source Publication | CHINESE PHYSICS B
 |
| 2013 | |
| Volume | 22Issue:5Pages:56103 |
| ISSN | 1674-1056 |
| Language | 英语 |
| Keyword | Single Event Transient (Set) Pulsed Laser Charge Collection Sige Heterojunction Bipolar Transistor (Hbt) |
| Abstract | A study on the single event transient (SET) induced by a pulsed laser in a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse. |
| Indexed By | SCI ; EI |
| Document Type | 期刊论文 |
| Identifier | http://ir.nssc.ac.cn/handle/122/4953 |
| Collection | 保障部/保障与试验验证中心 |
| Corresponding Author | Sun, YB (reprint author), Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China. |
| Recommended Citation GB/T 7714 | Sun Ya-Bin,Fu Jun,Xu Jun,et al. A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor[J]. CHINESE PHYSICS B,2013,22(5):56103. |
| APA | Sun Ya-Bin.,Fu Jun.,Xu Jun.,Wang Yu-Dong.,Zhou Wei.,...&Sun, YB .(2013).A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor.CHINESE PHYSICS B,22(5),56103. |
| MLA | Sun Ya-Bin,et al."A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor".CHINESE PHYSICS B 22.5(2013):56103. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 201322556103.pdf（594KB） | 开放获取 | CC BY-NC-SA | Application Full Text | |||
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