| 基于脉冲激光单粒子效应的二次光斑研究 | |
| Alternative Title | Secondary Spot for Pulsed Laser SEE Testing |
| 姜昱光; 封国强; 朱翔; 马英起; 上官士鹏; 余永涛; 韩建伟 | |
| Department | 保障部/保障与试验验证中心 |
| Source Publication | 原子能科学技术
 |
| 2013 | |
| Volume | 47Issue:12Pages:2361-2364 |
| ISSN | 1000-6931 |
| Language | 中文 |
| Keyword | 二次光斑 脉冲激光 硅衬底 单粒子效应 |
| Abstract | 脉冲激光可有效模拟重离子触发芯片的单粒子效应。本工作在应用背部激光试验方法辐照芯片时观察到了二次光斑现象,通过Si衬底和Si晶圆片研究了芯片单粒子效应实验中二次光斑的成因。实验结果表明,二次光斑主要是由于激光在芯片有源区附近的金属布线层反射形成的。通过测量芯片的Si衬底厚度以及激光触发芯片单粒子效应时的聚焦深度,实验验证了二次光斑是在金属布线层区域形成的。 |
| Other Abstract | The pulsed laser is an effective method to simulate single event effect (SEE) induced by heavy ions.When the laser focused on the chip surface using the backside approach,the laser spot was observed.The experiment data of Si substrate and Si wafer show that the secondary spot is formed due to the reflection of metal layer,and it is verified by the thickness of Si substrate and the depth of laser focusing. |
| Indexed By | EI ; CSCD |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.nssc.ac.cn/handle/122/5027 |
| Collection | 保障部/保障与试验验证中心 |
| Recommended Citation GB/T 7714 | 姜昱光,封国强,朱翔,等. 基于脉冲激光单粒子效应的二次光斑研究[J]. 原子能科学技术,2013,47(12):2361-2364. |
| APA | 姜昱光.,封国强.,朱翔.,马英起.,上官士鹏.,...&韩建伟.(2013).基于脉冲激光单粒子效应的二次光斑研究.原子能科学技术,47(12),2361-2364. |
| MLA | 姜昱光,et al."基于脉冲激光单粒子效应的二次光斑研究".原子能科学技术 47.12(2013):2361-2364. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 201347122361.pdf（3277KB） | 开放获取 | CC BY-NC-SA | Application Full Text | |||
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