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一种用于半导体器件材料反射率的光学测量方法
Application Number

CN201510432217.4

封国强; 马英起; 韩建伟; 上官士鹏; 朱翔; 陈睿
2015-07-21
ClassificationG01n21/55(2014.01)i
Country中国
Abstract

本发明提供了一种用于半导体器件材料反射率的光学测量方法,对于单一材料利用能量计分别测量入射于被测表面的入射光能量E1和经被测表面反射的反射光能量E1’后,计算获得在空气中的半导体器件材料反射率R1=E1’/E1,对于双层材料分别测量两种相接触的材料在空气中的反射率r1和r2后,根据材料界面处反射率公式r1=(n1-n3)2/(n1+n3)2和r2=(n2-n3)2/(n2+n3)2计算获得两种材料的折射率n1和n2,其中n3表示空气的折射率,进而计算获得两种材料接触面处的反射率上述光学测量方法弥补了当前反射率测量方法仅限于平行光的问题,能够实现对不同聚焦程度光束的反射率测量

Language中文
Document Type专利
Identifierhttp://ir.nssc.ac.cn/handle/122/5242
Collection保障部/保障与试验验证中心
Recommended Citation
GB/T 7714
封国强,马英起,韩建伟,等. 一种用于半导体器件材料反射率的光学测量方法[P]. 2015-07-21.
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