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一种用于半导体器件材料吸收系数的光学测量方法
Application Number

CN201510524097.0

封国强; 马英起; 韩建伟; 上官士鹏; 朱翔; 陈睿
2015-08-24
ClassificationG01n21/17(2006.01)i
Country中国
Abstract

本发明提供了一种用于半导体器件材料吸收系数的光学测量方法,包括:步骤1)测量半导体器件材料被测位置的厚度d及反射率R;步骤2)利用能量计分别测量照射于被测位置一面的光能量E1和经被测位置另一面穿透的光能量E2后,计算获得经被测位置一面反射后入射至材料内的光能量E0=E1(1-R),和穿透至被测位置另一面反射前的光能量E=E2/(1-R);步骤3)利用公式E=E0e-αd计算得到材料的吸收系数α。利用该光学测量方法能够实现材料吸收系数的现场原位测量,降低了测量成本。

Language中文
Document Type专利
Identifierhttp://ir.nssc.ac.cn/handle/122/5247
Collection保障部/保障与试验验证中心
Recommended Citation
GB/T 7714
封国强,马英起,韩建伟,等. 一种用于半导体器件材料吸收系数的光学测量方法[P]. 2015-08-24.
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