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Alternative TitleStudy on Technology of Using Semiconductor Diode Volt-Ampere Characteristic to Test Langmuir Probe Performance
刘超; 关燚炳; 张爱兵; 孙越强; 梁金宝; 郑香脂; 丁建京; 孔令高; 田峥; 王文静; liuch@nssc.ac.cn
Source Publication空间科学学报
Keyword朗缪尔探针 性能测试 伏安特性 半导体二极管
Other AbstractA technique of using a semiconductor diode volt-ampere characteristic to test Langmuir probe performance is presented. The Langmuir probe is an important technique for in-suit detecting the space plasma, and its performance test is the key to ensure that its technical indicators can meet the mission requirements. The technique of using a semiconductor diode volt-ampere characteristic demands less of external factors, so it can be carried out in a laboratory environment. The test results can be used as preliminary performance verification before calibration test of ground plasma environment, and it is proved that the method is effective and feasible in a lab environment test.
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Document Type期刊论文
Corresponding Authorliuch@nssc.ac.cn
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GB/T 7714
刘超,关燚炳,张爱兵,等. 利用半导体二极管伏安特性进行朗缪尔探针性能测试研究[J]. 空间科学学报,2015,35(6):763-768.
APA 刘超.,关燚炳.,张爱兵.,孙越强.,梁金宝.,...&liuch@nssc.ac.cn.(2015).利用半导体二极管伏安特性进行朗缪尔探针性能测试研究.空间科学学报,35(6),763-768.
MLA 刘超,et al."利用半导体二极管伏安特性进行朗缪尔探针性能测试研究".空间科学学报 35.6(2015):763-768.
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