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利用半导体二极管伏安特性进行朗缪尔探针性能测试研究
Alternative TitleStudy on Technology of Using Semiconductor Diode Volt-Ampere Characteristic to Test Langmuir Probe Performance
刘超; 关燚炳; 张爱兵; 孙越强; 梁金宝; 郑香脂; 丁建京; 孔令高; 田峥; 王文静; liuch@nssc.ac.cn
Department空间环境部
Source Publication空间科学学报
2015
Volume35Issue:6Pages:763-768
ISSN0254-6124
Language中文
Keyword朗缪尔探针 性能测试 伏安特性 半导体二极管
Abstract研究讨论了一种利用半导体二极管伏安特性进行朗缪尔探针性能测试的方法.设计的朗缪尔探针性能测试方法对外界因素要求较低,在常温常压的通常实验室环境下即可进行,其测试结果可作为利用地面等离子体环境进行定标测试前的初步性能验证.通过实验室环境下的测试试验,验证了该方法的有效性和可行性.
Other AbstractA technique of using a semiconductor diode volt-ampere characteristic to test Langmuir probe performance is presented. The Langmuir probe is an important technique for in-suit detecting the space plasma, and its performance test is the key to ensure that its technical indicators can meet the mission requirements. The technique of using a semiconductor diode volt-ampere characteristic demands less of external factors, so it can be carried out in a laboratory environment. The test results can be used as preliminary performance verification before calibration test of ground plasma environment, and it is proved that the method is effective and feasible in a lab environment test.
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Document Type期刊论文
Identifierhttp://ir.nssc.ac.cn/handle/122/5354
Collection空间环境部
Corresponding Authorliuch@nssc.ac.cn
Recommended Citation
GB/T 7714
刘超,关燚炳,张爱兵,等. 利用半导体二极管伏安特性进行朗缪尔探针性能测试研究[J]. 空间科学学报,2015,35(6):763-768.
APA 刘超.,关燚炳.,张爱兵.,孙越强.,梁金宝.,...&liuch@nssc.ac.cn.(2015).利用半导体二极管伏安特性进行朗缪尔探针性能测试研究.空间科学学报,35(6),763-768.
MLA 刘超,et al."利用半导体二极管伏安特性进行朗缪尔探针性能测试研究".空间科学学报 35.6(2015):763-768.
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2015356763.pdf(2015KB)期刊论文作者接受稿开放获取CC BY-NC-SAApplication Full Text
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