| A case study of failure analysis on ESD-induced degradation of 405nm LD | |
| Liu, Hongmin; Li, Zhe; Weng, Zheng; Jiang, Hao; Shen, Yuanting | |
| Department | 保障部/保障与试验验证中心 |
| Source Publication | Conference Proceedings from the International Symposium for Testing and Failure Analysis |
| 2015 | |
| Pages | 227-229 |
| Language | 英语 |
| ISBN | 9781627081023 |
| Abstract | A field failing Ondax's 405nm Laser Diode (LD) was under failure analysis. The failure analysis (FA) results showed that the LD was very sensitive to ESD and the degradation was ESD induced. Some mechanism explanation is also given in this paper. Copyright © 2015 ASM International® All rights reserved. |
| Conference Name | 41st International Symposium for Testing and Failure Analysis, ISTFA 2015 |
| Conference Date | November 1, 2015 - November 5, 2015 |
| Conference Place | Portland, OR, United states |
| Indexed By | EI ; CPCI |
| Document Type | 会议论文 |
| Identifier | http://ir.nssc.ac.cn/handle/122/5407 |
| Collection | 保障部/保障与试验验证中心 |
| Recommended Citation GB/T 7714 | Liu, Hongmin,Li, Zhe,Weng, Zheng,et al. A case study of failure analysis on ESD-induced degradation of 405nm LD[C]:ASM International,2015:227-229. |
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