NSSC OpenIR  > 保障部/保障与试验验证中心
A case study of failure analysis on ESD-induced degradation of 405nm LD
Liu, Hongmin; Li, Zhe; Weng, Zheng; Jiang, Hao; Shen, Yuanting
Department保障部/保障与试验验证中心
Source PublicationConference Proceedings from the International Symposium for Testing and Failure Analysis
2015
Pages227-229
Language英语
ISBN9781627081023
AbstractA field failing Ondax's 405nm Laser Diode (LD) was under failure analysis. The failure analysis (FA) results showed that the LD was very sensitive to ESD and the degradation was ESD induced. Some mechanism explanation is also given in this paper. Copyright © 2015 ASM International® All rights reserved.
Conference Name41st International Symposium for Testing and Failure Analysis, ISTFA 2015
Conference DateNovember 1, 2015 - November 5, 2015
Conference PlacePortland, OR, United states
Indexed ByEI ; CPCI
Document Type会议论文
Identifierhttp://ir.nssc.ac.cn/handle/122/5407
Collection保障部/保障与试验验证中心
Recommended Citation
GB/T 7714
Liu, Hongmin,Li, Zhe,Weng, Zheng,et al. A case study of failure analysis on ESD-induced degradation of 405nm LD[C]:ASM International,2015:227-229.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Liu, Hongmin]'s Articles
[Li, Zhe]'s Articles
[Weng, Zheng]'s Articles
Baidu academic
Similar articles in Baidu academic
[Liu, Hongmin]'s Articles
[Li, Zhe]'s Articles
[Weng, Zheng]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Liu, Hongmin]'s Articles
[Li, Zhe]'s Articles
[Weng, Zheng]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.