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Nonvolatile conductive filaments resistive switching behaviors in Ag/GaOx/Nb:SrTiO3/Ag structure
Li, P.G.; Zhi, Y.S.; Wang, P.C.; Sun, Z.B.; Li, L.H.; An, Y.H.; Guo, D.Y.; Tang, W.H.; Xiao, J.H.; Tang, W.H. (whtang@bupt.edu.cn)
Department空间技术部
Source PublicationApplied Physics A: Materials Science and Processing
2016
Volume122Issue:7
ISSN0947-8396
Language英语
AbstractAg/GaOx/NSTO/Ag structures were fabricated, and the electrical properties measurement results show that the device behaviors a unipolar resistance switching characteristic with bi-stable resistance ratio of three orders. In the positive voltage region, the dominant conducting mechanism of high resistance state obeys Poole–Frenkel emission rules, while in the negative region, that obeys space-charge-limited current mechanism. Both the I–V curves of ON and OFF states and temperature-dependent variation resistances indicate that the unipolar resistance switching behavior can be explained by the formation/rupture of conductive filaments, which composed of oxygen vacancies. The stable switching results demonstrated that the structure can be applied in resistance random access memory devices. © 2016, Springer-Verlag Berlin Heidelberg.
Indexed BySCI ; EI
Document Type期刊论文
Identifierhttp://ir.nssc.ac.cn/handle/122/5538
Collection空间技术部
Corresponding AuthorTang, W.H. (whtang@bupt.edu.cn)
Recommended Citation
GB/T 7714
Li, P.G.,Zhi, Y.S.,Wang, P.C.,et al. Nonvolatile conductive filaments resistive switching behaviors in Ag/GaOx/Nb:SrTiO3/Ag structure[J]. Applied Physics A: Materials Science and Processing,2016,122(7).
APA Li, P.G..,Zhi, Y.S..,Wang, P.C..,Sun, Z.B..,Li, L.H..,...&Tang, W.H. .(2016).Nonvolatile conductive filaments resistive switching behaviors in Ag/GaOx/Nb:SrTiO3/Ag structure.Applied Physics A: Materials Science and Processing,122(7).
MLA Li, P.G.,et al."Nonvolatile conductive filaments resistive switching behaviors in Ag/GaOx/Nb:SrTiO3/Ag structure".Applied Physics A: Materials Science and Processing 122.7(2016).
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