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Design of X-band GaAs power amplifier
Xu, Hui; Li, Mimi; Xie, Yifang; Huang, Yonghui
Department空间技术部
Source Publication2015 IEEE 6th International Symposium on Microwave, Antenna, Propagation, and EMC Technologies, MAPE 2015
2015
Pages521-524
Language英语
ISBN9781467374415
AbstractThis paper proposes a design of X-band GaAs power amplifier with the technology of external impedance matching. According to the scattering parameter (S parameter) of field effect tube (FET) provided by manufacturer, the matching circuit and direct current (DC) bias circuit of power amplifier can be designed. The advantage of this method is that the work frequency, efficiency, gain and output power can be designed according to the actual situation by engineers autonomously. In addition, the method has the advantages of low cost and high efficiency. Simulation and practical measured data show that, when the center frequency is 8.2 GHz, the small signal gain is 8.1 dB, and the maximum output power is 31.25 dBm and the maximum power added efficiency (PAE) is 33.62 %. © 2015 IEEE.
Conference Name6th IEEE International Symposium on Microwave, Antenna, Propagation, and EMC Technologies, MAPE 2015
Conference DateOctober 28, 2015 - October 30, 2015
Conference PlaceShanghai, China
Indexed ByEI ; CPCI
Document Type会议论文
Identifierhttp://ir.nssc.ac.cn/handle/122/5559
Collection空间技术部
Recommended Citation
GB/T 7714
Xu, Hui,Li, Mimi,Xie, Yifang,et al. Design of X-band GaAs power amplifier[C]:Institute of Electrical and Electronics Engineers Inc.,2015:521-524.
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