| Design of X-band GaAs power amplifier | |
| Xu, Hui; Li, Mimi; Xie, Yifang; Huang, Yonghui | |
| Department | 空间技术部 |
| Source Publication | 2015 IEEE 6th International Symposium on Microwave, Antenna, Propagation, and EMC Technologies, MAPE 2015 |
| 2015 | |
| Pages | 521-524 |
| Language | 英语 |
| ISBN | 9781467374415 |
| Abstract | This paper proposes a design of X-band GaAs power amplifier with the technology of external impedance matching. According to the scattering parameter (S parameter) of field effect tube (FET) provided by manufacturer, the matching circuit and direct current (DC) bias circuit of power amplifier can be designed. The advantage of this method is that the work frequency, efficiency, gain and output power can be designed according to the actual situation by engineers autonomously. In addition, the method has the advantages of low cost and high efficiency. Simulation and practical measured data show that, when the center frequency is 8.2 GHz, the small signal gain is 8.1 dB, and the maximum output power is 31.25 dBm and the maximum power added efficiency (PAE) is 33.62 %. © 2015 IEEE. |
| Conference Name | 6th IEEE International Symposium on Microwave, Antenna, Propagation, and EMC Technologies, MAPE 2015 |
| Conference Date | October 28, 2015 - October 30, 2015 |
| Conference Place | Shanghai, China |
| Indexed By | EI ; CPCI |
| Document Type | 会议论文 |
| Identifier | http://ir.nssc.ac.cn/handle/122/5559 |
| Collection | 空间技术部 |
| Recommended Citation GB/T 7714 | Xu, Hui,Li, Mimi,Xie, Yifang,et al. Design of X-band GaAs power amplifier[C]:Institute of Electrical and Electronics Engineers Inc.,2015:521-524. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 201607510372.pdf（1635KB） | 会议论文 | 开放获取 | CC BY-NC-SA | Application Full Text | ||
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