|Bias-dependent timing jitter of 1-GHz sinusoidally gated InGaAs/InP avalanche photodiode|
|Zhu, Ge; Zheng, Fu; Wang, Chao; Sun, Zhibin; Zhai, Guangjie; Zhao, Qing; Zhao, Qing (email@example.com)
|Source Publication||Chinese Physics B
|Abstract||We characterized the dependence of the timing jitter of an InGaAs/InP single-photon avalanche diode on the excess bias voltage (Vex) when operated in 1-GHz sinusoidally gated mode. The single-photon avalanche diode was cooled to -30 degrees Celsius. When the Vexis too low (0.2 V-0.8 V) or too high (3 V-4.2 V), the timing jitter is increased with the Vex, particularly at high Vex. While at middle Vex(1 V-2.8 V), the timing jitter is reduced. Measurements of the timing jitter of the same avalanche diode with pulsed gating show that this effect is likely related to the increase of both the amplitude of the Vexand the width of the gate-on time. For the 1-GHz sinusoidally gated detector, the best jitter of 93 ps is achieved with a photon detection efficiency of 21.4% and a dark count rate of ∼2.08×10-5per gate at the Vexof 2.8 V. To evaluate the whole performance of the detector, we calculated the noise equivalent power (NEP) and the afterpulse probability (Pap). It is found that both NEP and Papincrease quickly when the Vexis above 2.8 V. At 2.8-V Vex, the NEP and Papare ∼2.06×10-16W/Hz1/2and 7.11%, respectively. Therefore, the detector should be operated with Vexof 2.8 V to exploit the fast time response, low NEP and low Pap. © 2016 Chinese Physical Society and IOP Publishing Ltd.|
|Corresponding Author||Zhao, Qing (firstname.lastname@example.org)|
Zhu, Ge,Zheng, Fu,Wang, Chao,et al. Bias-dependent timing jitter of 1-GHz sinusoidally gated InGaAs/InP avalanche photodiode[J]. Chinese Physics B,2016,25(11).
Zhu, Ge.,Zheng, Fu.,Wang, Chao.,Sun, Zhibin.,Zhai, Guangjie.,...&Zhao, Qing .(2016).Bias-dependent timing jitter of 1-GHz sinusoidally gated InGaAs/InP avalanche photodiode.Chinese Physics B,25(11).
Zhu, Ge,et al."Bias-dependent timing jitter of 1-GHz sinusoidally gated InGaAs/InP avalanche photodiode".Chinese Physics B 25.11(2016).
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