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薄膜制备用电子束蒸发强流气固两用离子源
Alternative Titleelectron beam evaporation broad beam metalion source for preparin thin films
冯毓材; 李晓谦; 北京8701信箱
Department空间科学技术研究室
Source Publication真空科学与技术
1996
Volume16Issue:6Pages:445-448
ISSN0253-9748
Language中文
Keyword表面改性 电子束蒸发 金属离子源 薄膜制备
Abstract介绍了一种新型的电子束蒸发(EBE)强流气、固两用离子源,其基本原理是将电子呸蒸发技术引入离子源放电室内,使的蒸发和游离一同一放电室内完成,该源不仅能引出包括各种难熔材料在内的强流金属和非金属离子束,而且能同时引出气态和固态元素的混合离子束。迄今为止,已引出包括C,W,Ta,Mo,Cr,Ti,B,Cu,Ni,Al,Ar〉N以及C和N,Ti等的混合离子束。用于薄膜制备的引出束径为3.6cm,其最大引
Funding Project中国科学院空间科学与应用研究中心
Document Type期刊论文
Identifierhttp://ir.nssc.ac.cn/handle/122/608
Collection空间技术部
Corresponding Author北京8701信箱
Recommended Citation
GB/T 7714
冯毓材,李晓谦,北京8701信箱. 薄膜制备用电子束蒸发强流气固两用离子源[J]. 真空科学与技术,1996,16(6):445-448.
APA 冯毓材,李晓谦,&北京8701信箱.(1996).薄膜制备用电子束蒸发强流气固两用离子源.真空科学与技术,16(6),445-448.
MLA 冯毓材,et al."薄膜制备用电子束蒸发强流气固两用离子源".真空科学与技术 16.6(1996):445-448.
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