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SEE Characteristics of COTS Devices by 1064nm Pulsed Laser Backside Testing
Ma, Yingqi1,2; Han, Jianwei1,2; Shangguan, Shipeng1,2; Chen, Rui1; Zhu, Xiang1,2; Li, Yue1; Zhan, Yueying2,3
作者部门保障部/保障与试验验证中心
会议录名称2018 IEEE Nuclear and Space Radiation Effects Conference, NSREC 2018
2018
DOI10.1109/NSREC.2018.8584271
语种英语
ISBN号9781538682630
摘要Commercial-off-the-shelf (COTS) devices are selected to use in the satellite instruments for the convenience with high performance and low cost. This work presents the results and analysis investigating on Single Event Upset (SEU) and Single Event Latch-up (SEL) characteristics of the COTS devices by backside laser testing. The modified equivalent LET (ELET) and its uncertainty are verified by the laser and heavy ion testing of several CMOS devices. © 2018 IEEE.
会议名称2018 IEEE Nuclear and Space Radiation Effects Conference, NSREC 2018
会议日期July 16, 2018 - July 20, 2018
会议地点Waikoloa, HI, United states
收录类别EI
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文献类型会议论文
条目标识符http://ir.nssc.ac.cn/handle/122/6925
专题保障部/保障与试验验证中心
作者单位1.National Space Science Center, Chinese Academy of Sciences, Beijing; 100190, China;
2.University of Chinese Academy of Sciences, Beijing; 100049, China;
3.Technology and Engineering Center for Space Utilization, Chinese Academy of Sciences, Beijing; 100094, China
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GB/T 7714
Ma, Yingqi,Han, Jianwei,Shangguan, Shipeng,et al. SEE Characteristics of COTS Devices by 1064nm Pulsed Laser Backside Testing[C],2018.
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