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SEE Characteristics of COTS Devices by 1064nm Pulsed Laser Backside Testing
Ma, Yingqi1,2; Han, Jianwei1,2; Shangguan, Shipeng1,2; Chen, Rui1; Zhu, Xiang1,2; Li, Yue1; Zhan, Yueying2,3
Department保障部/保障与试验验证中心
Source Publication2018 IEEE Nuclear and Space Radiation Effects Conference, NSREC 2018
2018
DOI10.1109/NSREC.2018.8584271
Language英语
ISBN9781538682630
AbstractCommercial-off-the-shelf (COTS) devices are selected to use in the satellite instruments for the convenience with high performance and low cost. This work presents the results and analysis investigating on Single Event Upset (SEU) and Single Event Latch-up (SEL) characteristics of the COTS devices by backside laser testing. The modified equivalent LET (ELET) and its uncertainty are verified by the laser and heavy ion testing of several CMOS devices. © 2018 IEEE.
Conference Name2018 IEEE Nuclear and Space Radiation Effects Conference, NSREC 2018
Conference DateJuly 16, 2018 - July 20, 2018
Conference PlaceWaikoloa, HI, United states
Indexed ByEI
Citation statistics
Document Type会议论文
Identifierhttp://ir.nssc.ac.cn/handle/122/6925
Collection保障部/保障与试验验证中心
Affiliation1.National Space Science Center, Chinese Academy of Sciences, Beijing; 100190, China;
2.University of Chinese Academy of Sciences, Beijing; 100049, China;
3.Technology and Engineering Center for Space Utilization, Chinese Academy of Sciences, Beijing; 100094, China
Recommended Citation
GB/T 7714
Ma, Yingqi,Han, Jianwei,Shangguan, Shipeng,et al. SEE Characteristics of COTS Devices by 1064nm Pulsed Laser Backside Testing[C],2018.
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