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C波段有源微波冷噪声源设计及其性能分析
Alternative TitleDesign and Characterization of C-Band Active Cold Noise Source
董帅1,2; 王振占1; 李彬1; 陆浩1; 贺秋瑞1,3
Department微波遥感部
Source Publication电子学报
2018
Volume46Issue:11Pages:2797-2802
DOI10.3969/j.issn.0372-2112.2018.11.030
ISSN0372-2112
Language中文
Keyword有源微波冷噪声源 辐射计 定标 HEMT
Abstract本文在介绍国内外有源微波冷噪声源技术发展的基础上,分析了有源微波冷噪声源的工作原理和关键技术.提出了一种有源微波冷噪声源设计方法,重点分析了设计过程中的关键环节对噪声源性能产生的影响.采用pHEMT型场效应管研制了C波段有源微波冷噪声源器件,并对该器件的性能进行了测试和分析.
Other AbstractThe active microwave cold noise source technology is introduced. The working principle and key technology of active microwave cold noise source are explained. A design method of active microwave cold noise source is proposed, and the influence of the key steps in the design process on the performance of the noise source is analyzed. Based on these theories, the C band active microwave cold noise source device was developed by the pHEMT type field effect transistor. In the end, the performance of the device is tested and analyzed. © 2018, Chinese Institute of Electronics. All right reserved.
Indexed ByEI ; CSCD
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Document Type期刊论文
Identifierhttp://ir.nssc.ac.cn/handle/122/6947
Collection微波遥感部
Affiliation1.中国科学院国家空间科学中心, 北京 100190;
2.北京无线电测量研究所, 北京 100854;
3.University of Chinese Academy of Sciences, Beijing; 100049, China
Recommended Citation
GB/T 7714
董帅,王振占,李彬,等. C波段有源微波冷噪声源设计及其性能分析[J]. 电子学报,2018,46(11):2797-2802.
APA 董帅,王振占,李彬,陆浩,&贺秋瑞.(2018).C波段有源微波冷噪声源设计及其性能分析.电子学报,46(11),2797-2802.
MLA 董帅,et al."C波段有源微波冷噪声源设计及其性能分析".电子学报 46.11(2018):2797-2802.
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