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The threshold voltage degradation of MOSFET in heavy-ion single event effect test
Zhang, Zeming1; Ma, Yingqi2; Li, Dan1; Tong, Chao1; Guo, Xiaoxiao1; Han, Jianwei2; Dang, Wei1
Department空间技术部
Source Publication2018 International Conference on Radiation Effects of Electronic Devices, ICREED 2018
2019
DOI10.1109/ICREED.2018.8905067
Language英语
ISBN9781538641354
AbstractA degradation is studied that the gate-source threshold voltage of BSS138BK N-channel MOSFET decreased dramatically in heavy-ion single event effect test. The comparative study is performed by laser test, total ionizing dose test and no-irradiation room temperature test. This case study illustrate the parameter degradation process, comparative test results and the analysis. © 2018 IEEE.
Conference Name2nd International Conference on Radiation Effects of Electronic Devices, ICREED 2018
Conference DateMay 16, 2018 - May 18, 2018
Conference PlaceBeijing, China
Indexed ByEI
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Document Type会议论文
Identifierhttp://ir.nssc.ac.cn/handle/122/7272
Collection空间技术部
Affiliation1.Technology and Engineering Centre for Space Utilization, Chinese Academy of Sciences, No.9 Dengzhuang, South Road, Beijing; 100094, China;
2.National Space Science Center, Chinese Academy of Sciences, Beijing; 100190, China
Recommended Citation
GB/T 7714
Zhang, Zeming,Ma, Yingqi,Li, Dan,et al. The threshold voltage degradation of MOSFET in heavy-ion single event effect test[C],2019.
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