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Laser-Induced Micro SEL Characterization of SRAM Devices
Yingqi, Ma1; Jianwei, Han1; Shipeng, Shangguan1,2; Xiang, Zhu1,2; Rui, Chen1
Department空间技术部
Source PublicationIEEE Radiation Effects Data Workshop
2019
Volume2019-July
DOI10.1109/REDW.2019.8906568
Language英语
ISBN9781728138282
AbstractThis paper presents micro single event latch-up characterization of SRAM by laser backside testing. The SEL threshold and the detailed micro SEL features have been investigated by laser automatic scanning experiment. The micro SEL results can give the reference for the hardness assurance in circuit system level. © 2019 IEEE.
Conference Name2019 IEEE Radiation Effects Data Workshop, REDW 2019
Conference DateJuly 8, 2019 - July 12, 2019
Conference PlaceSan Antonio, TX, United states
Indexed ByEI
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Document Type会议论文
Identifierhttp://ir.nssc.ac.cn/handle/122/7279
Collection空间技术部
Affiliation1.Chinese Academy of Sciences, National Space Science Center, Beijing; 100190, China;
2.University of Chinese Academy of Sciences, Beijing; 100049, China
Recommended Citation
GB/T 7714
Yingqi, Ma,Jianwei, Han,Shipeng, Shangguan,et al. Laser-Induced Micro SEL Characterization of SRAM Devices[C],2019.
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201908906568.pdf(167KB)会议论文 开放获取CC BY-NC-SAApplication Full Text
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