| Laser-Induced Micro SEL Characterization of SRAM Devices | |
| Yingqi, Ma1; Jianwei, Han1; Shipeng, Shangguan1,2; Xiang, Zhu1,2; Rui, Chen1 | |
| Department | 空间技术部 |
| Source Publication | IEEE Radiation Effects Data Workshop |
| 2019 | |
| Volume | 2019-July |
| DOI | 10.1109/REDW.2019.8906568 |
| Language | 英语 |
| ISBN | 9781728138282 |
| Abstract | This paper presents micro single event latch-up characterization of SRAM by laser backside testing. The SEL threshold and the detailed micro SEL features have been investigated by laser automatic scanning experiment. The micro SEL results can give the reference for the hardness assurance in circuit system level. © 2019 IEEE. |
| Conference Name | 2019 IEEE Radiation Effects Data Workshop, REDW 2019 |
| Conference Date | July 8, 2019 - July 12, 2019 |
| Conference Place | San Antonio, TX, United states |
| Indexed By | EI |
| Citation statistics | |
| Document Type | 会议论文 |
| Identifier | http://ir.nssc.ac.cn/handle/122/7279 |
| Collection | 空间技术部 |
| Affiliation | 1.Chinese Academy of Sciences, National Space Science Center, Beijing; 100190, China; 2.University of Chinese Academy of Sciences, Beijing; 100049, China |
| Recommended Citation GB/T 7714 | Yingqi, Ma,Jianwei, Han,Shipeng, Shangguan,et al. Laser-Induced Micro SEL Characterization of SRAM Devices[C],2019. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 201908906568.pdf（167KB） | 会议论文 | 开放获取 | CC BY-NC-SA | Application Full Text | ||
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