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IDT7164在_40_Ar束流中的单粒子效应
Alternative TitleMEASUREMENT OF IDT7164 SINGLE EVENT UPSET(SEU) IN ARGON BEAMS OF 25 MeV/u
王丽君; 孙辉先; 陈小敏; 汪大星; 候明东; 马峰; 刘杰; 北京8701信箱
Department空间综合电子技术研究室
Source Publication原子能科学技术
1997
Volume31Issue:3Pages:264-266
ISSN1000-6931
Language中文
Keyword加速器 单粒子事件 Idt7164芯片 截面
Abstract在氩束流中,测试了IDT7164芯片的单粒子事件翻转效应,记录了不同程序运行中的实验结果,由此计算了芯片的截面。
Other AbstractThe measurement of IDT7164 SEU in Argon beams of 25 MeV/u was made.The result of experiment in different programs are recorded.The cross section of the chip is calculated.
Funding Project中国科学院空间科学与应用研究中心
Document Type期刊论文
Identifierhttp://ir.nssc.ac.cn/handle/122/745
Collection空间技术部
Corresponding Author北京8701信箱
Recommended Citation
GB/T 7714
王丽君,孙辉先,陈小敏,等. IDT7164在_40_Ar束流中的单粒子效应[J]. 原子能科学技术,1997,31(3):264-266.
APA 王丽君.,孙辉先.,陈小敏.,汪大星.,候明东.,...&北京8701信箱.(1997).IDT7164在_40_Ar束流中的单粒子效应.原子能科学技术,31(3),264-266.
MLA 王丽君,et al."IDT7164在_40_Ar束流中的单粒子效应".原子能科学技术 31.3(1997):264-266.
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