0.13 mum部分耗尽SOI工艺反相器链SET脉宽传播
Alternative TitleSingle event transient pulse width transmission of 0.13 mum partial depleted SOI process DFF
上官士鹏; 朱翔; 陈睿; 马英起; 李赛; 韩建伟
Source Publication北京航空航天大学学报
Volume45Issue:11Pages:2193-2198; AR:1001-5965(2019)45:11<2193:01MBFH>2.0.TX;2-#
Keyword部分耗尽绝缘体上硅(PD-SOI) 重离子加速器 脉冲激光 有效能量 脉冲宽度 双极放大 partial depleted silicon-on-insulator (PD-SOI) heavy ion accelerator pulsed laser effective energy pulse width bipolar amplification
Abstract基于0.13 mum部分耗尽绝缘体上硅(PD-SOI)工艺,设计了一款片上反相器链(DFF)单粒子瞬态(SET)脉宽测试电路并流片实现,SET脉宽测试范围为105 ~ 3 150 ps,精度为 52.5 ps。利用重离子加速器和脉冲激光模拟单粒子效应试验装置对器件进行了SET脉宽试验。采用线性能量传输(LET值)为37.6 MeV·cm~2/mg的~(86)Kr离子触发了反相器链的三级脉宽传播,利用脉冲激光正面测试器件触发了相同级数的脉宽,同时,激光能量值为5 500 pJ时触发了反相器链的双极放大效应,脉宽展宽32.4%。通过对比激光与重离子的试验结果,以及明确激光到达有源区的有效能量的影响因子,建立了激光有效能量与重离子LET值的对应关系,分析了两者对应关系偏差的原因。研究结果可为其他种类芯片单粒子效应试验建立激光有效能量与重离子LET值的对应关系提供参考。
Other AbstractBased on 0.13 mum partial depleted silicon-on-insulator (PD-SOI)process,a delay flip-flop(DFF)has been designed for single event transient (SET)pulse width,with the pulse width test range between 105 ps to 3 150 ps and the precision being 52.5 ps. The DFF has been tested by heavy ion accelerator and pulsed laser single event effect facility. ~(86)Kr ion with linear energy transfer (LET)equal 37.6 MeV· cm~2/mg was chosen to obtain a DFF 3 level SET pulse width,and pulsed laser triggered the same pulse width by front-side testing. By using 5 500 pJ laser energy,the bipolar amplification of DFF has been triggered,and the pulse width is amplified by 32.3%. According to the same SET pulse width,a method for estimating the pulsed laser energy reaching to the active area of chips which is also called effective energy is established. Meanwhile,based on the experimental results,the relationship between effective energy and LET was also established,and the deviations between the two methods were also analyzed. Other kinds of chips can also use this method to establish the relationship between laser energy and LET.
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Affiliation1.上官士鹏, 中国科学院国家空间科学中心
2.中国科学院大学, 北京
3.北京 100190
4.100049, 中国.
5.朱翔, 中国科学院国家空间科学中心
6.中国科学院大学, 北京
7.北京 100190
8.100049, 中国.
9.李赛, 中国科学院国家空间科学中心
10.中国科学院大学, 北京
11.北京 100190
12.100049, 中国.
13.陈睿, 中国科学院国家空间科学中心, 北京 100190, 中国.
14.马英起, 中国科学院国家空间科学中心, 北京 100190, 中国.
15.韩建伟, 中国科学院国家空间科学中心, 北京 100190, 中国.
16.Shangguan Shipeng, National Space Science Centre,Chinese Academy of Sciences
17.University of Chinese Academy of Sciences, Beijing
18.Beijing 100190
20.Zhu Xiang, National Space Science Centre,Chinese Academy of Sciences
21.University of Chinese Academy of Sciences, Beijing
22.Beijing 100190
24.Li Sai, National Space Science Centre,Chinese Academy of Sciences
25.University of Chinese Academy of Sciences, Beijing
26.Beijing 100190
28.Chen Rui, National Space Science Centre,Chinese Academy of Sciences, Beijing 100190, China.
29.Ma Yingqi, National Space Science Centre,Chinese Academy of Sciences, Beijing 100190, China.
30.Han Jianwei, National Space Science Centre,Chinese Academy of Sciences, Beijing 100190, China.
Recommended Citation
GB/T 7714
上官士鹏,朱翔,陈睿,等. 0.13 mum部分耗尽SOI工艺反相器链SET脉宽传播[J]. 北京航空航天大学学报,2019,45(11):2193-2198; AR:1001-5965(2019)45:11<2193:01MBFH>2.0.TX;2-#.
APA 上官士鹏,朱翔,陈睿,马英起,李赛,&韩建伟.(2019).0.13 mum部分耗尽SOI工艺反相器链SET脉宽传播.北京航空航天大学学报,45(11),2193-2198; AR:1001-5965(2019)45:11<2193:01MBFH>2.0.TX;2-#.
MLA 上官士鹏,et al."0.13 mum部分耗尽SOI工艺反相器链SET脉宽传播".北京航空航天大学学报 45.11(2019):2193-2198; AR:1001-5965(2019)45:11<2193:01MBFH>2.0.TX;2-#.
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