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Design of a Schottky Metal-Brim Structure to Optimize 180-220 GHz Broadband Frequency Doubler MMIC
Alternative TitleWOS:000549854600014
Qi, Luwei1,2; Meng, Jin; Liu, Xiaoyu1,3; Yang, Chengyue1; Zhou, Jingtao1; Zhang, Dehai; Jin, Zhi1
Source PublicationELECTRONICS
2020
Volume9Issue:5Pages:715
DOI10.3390/electronics9050715
Language英语
KeywordSchottky barrier diode MMIC Schottky metal-brim I-V characteristic CAPACITANCE
AbstractThe present work proposes a 180-225 GHz broadband frequency doubler monolithic microwave integrated circuit (MMIC) based on a novel Schottky barrier diode (SBD) terminal structure denoted as a Schottky metal-brim (SMB). Compared with an MMIC adopting the conventional SBD terminal structure, preliminary measurements show that the maximum output power of the MMIC adopting the SMB structure increases from 0.216 mW at 206 GHz to 0.914 mW at 208 GHz. Analysis of the nonlinear current-voltage and capacitance-voltage characteristics of the two terminal structures based on an extended one-dimensional drift-diffusion model, indicates that the SMB structure provides significantly better conversion efficiency than the conventional SBD structure by eliminating the accumulation of charge and additional current paths near the Schottky electrode edge. It provides a feasible scheme for the optimization of MMIC applications requiring high power and high efficiency.
Indexed BySCI
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Document Type期刊论文
Identifierhttp://ir.nssc.ac.cn/handle/122/7531
Collection中国科学院国家空间科学中心
Affiliation1.Chinese Acad Sci, Natl Space Sci Ctr, Key Lab Microwave Remote Sensing, Beijing 100190, Peoples R China
2.Chinese Acad Sci, Inst Microelet, Beijing 100029, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
4.Univ Elect Sci & Technol China, Sch Elect Engn, Chengdu 611731, Peoples R China
Recommended Citation
GB/T 7714
Qi, Luwei,Meng, Jin,Liu, Xiaoyu,et al. Design of a Schottky Metal-Brim Structure to Optimize 180-220 GHz Broadband Frequency Doubler MMIC[J]. ELECTRONICS,2020,9(5):715.
APA Qi, Luwei.,Meng, Jin.,Liu, Xiaoyu.,Yang, Chengyue.,Zhou, Jingtao.,...&Jin, Zhi.(2020).Design of a Schottky Metal-Brim Structure to Optimize 180-220 GHz Broadband Frequency Doubler MMIC.ELECTRONICS,9(5),715.
MLA Qi, Luwei,et al."Design of a Schottky Metal-Brim Structure to Optimize 180-220 GHz Broadband Frequency Doubler MMIC".ELECTRONICS 9.5(2020):715.
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