Improvements in reverse breakdown characteristics of THz GaAs Schottky barrier varactor based on metal-brim structure

doi:10.1088/1674-1056/ab81fc

NSSC OpenIR

	Improvements in reverse breakdown characteristics of THz GaAs Schottky barrier varactor based on metal-brim structure
Alternative Title	WOS:000541795400001;20202508851563
	Qi, Lu-Wei ; Liu, Xiao-Yu ; Meng, Jin ; Zhang, De-Hai ; Zhou, Jing-Tao
Source Publication	CHINESE PHYSICS B
	2020
Volume	29 Issue:5 Pages:57306
DOI	10.1088/1674-1056/ab81fc
ISSN	1674-1056
Language	英语
Keyword	breakdown characteristics Schottky metal-brim Schottky barrier varactor GaAs CURRENT-VOLTAGE CHARACTERISTICS EDGE GAN
Abstract	The excellent reverse breakdown characteristics of Schottky barrier varactor (SBV) are crucially required for the application of high power and high efficiency multipliers. The SBV with a novel Schottky structure named metal-brim is fabricated and systemically evaluated. Compared with normal structure, the reverse breakdown voltage of the new type SBV improves from -7.31 V to -8.75 V. The simulation of the Schottky metal-brim SBV is also proposed. Three factors, namely distribution of leakage current, the electric field, and the area of space charge region are mostly concerned to explain the physical mechanism. Schottky metal-brim structure is a promising approach to improve the reverse breakdown voltage and reduce leakage current by eliminating the accumulation of charge at Schottky electrode edge.
Indexed By	SCI ; EI
Citation statistics	Cited Times:1[WOS] [WOS Record] [Related Records in WOS]
Document Type	期刊论文
Identifier	http://ir.nssc.ac.cn/handle/122/7680
Collection	中国科学院国家空间科学中心
Affiliation	1.[Qi, Lu-Wei 2.Meng, Jin 3.Chinese Acad Sci, Natl Space Sci Ctr, Key Lab Microwave Remote Sensing, Beijing 100190, Peoples R China 4.[Qi, Lu-Wei 5.Liu, Xiao-Yu 6.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China 7.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
Recommended Citation GB/T 7714	Qi, Lu-Wei,Liu, Xiao-Yu,Meng, Jin,et al. Improvements in reverse breakdown characteristics of THz GaAs Schottky barrier varactor based on metal-brim structure[J]. CHINESE PHYSICS B,2020,29(5):57306.
APA	Qi, Lu-Wei,Liu, Xiao-Yu,Meng, Jin,Zhang, De-Hai,&Zhou, Jing-Tao.(2020).Improvements in reverse breakdown characteristics of THz GaAs Schottky barrier varactor based on metal-brim structure.CHINESE PHYSICS B,29(5),57306.
MLA	Qi, Lu-Wei,et al."Improvements in reverse breakdown characteristics of THz GaAs Schottky barrier varactor based on metal-brim structure".CHINESE PHYSICS B 29.5(2020):57306.

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