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Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks
Alternative TitleWOS:000521190800001;20200408076435
Yang, Hong1; Qi, Luwei1,2; Zhang, Yanbo; Tang, Bo; Liu, Qianqian; Xu, Hao; Ma, Xueli; Wang, Xiaolei; Li, Yongliang; Yin, Huaxiang1; Li, Junfeng; Zhu, Huilong; Zhao, Chao; Wang, Wenwu1; Ye, Tianchun
Source PublicationSCIENCE CHINA-INFORMATION SCIENCES
2020
Volume63Issue:2Pages:129403
DOI10.1007/s11432-019-9875-2
ISSN1674-733X
Language英语
Indexed BySCI ; EI
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Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.nssc.ac.cn/handle/122/7681
Collection中国科学院国家空间科学中心
Affiliation1.Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
2.Univ Chinese Acad Sci, Sch Microelect, Beijing 100049, Peoples R China
3.Chinese Acad Sci, Natl Space Sci Ctr, Beijing 100190, Peoples R China
Recommended Citation
GB/T 7714
Yang, Hong,Qi, Luwei,Zhang, Yanbo,et al. Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks[J]. SCIENCE CHINA-INFORMATION SCIENCES,2020,63(2):129403.
APA Yang, Hong.,Qi, Luwei.,Zhang, Yanbo.,Tang, Bo.,Liu, Qianqian.,...&Ye, Tianchun.(2020).Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks.SCIENCE CHINA-INFORMATION SCIENCES,63(2),129403.
MLA Yang, Hong,et al."Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks".SCIENCE CHINA-INFORMATION SCIENCES 63.2(2020):129403.
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