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Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks | |
Alternative Title | WOS:000521190800001;20200408076435 |
Yang, Hong1; Qi, Luwei1,2; Zhang, Yanbo; Tang, Bo; Liu, Qianqian; Xu, Hao; Ma, Xueli; Wang, Xiaolei; Li, Yongliang; Yin, Huaxiang1; Li, Junfeng; Zhu, Huilong; Zhao, Chao; Wang, Wenwu1; Ye, Tianchun | |
Source Publication | SCIENCE CHINA-INFORMATION SCIENCES
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2020 | |
Volume | 63Issue:2Pages:129403 |
DOI | 10.1007/s11432-019-9875-2 |
ISSN | 1674-733X |
Language | 英语 |
Indexed By | SCI ; EI |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.nssc.ac.cn/handle/122/7681 |
Collection | 中国科学院国家空间科学中心 |
Affiliation | 1.Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China 2.Univ Chinese Acad Sci, Sch Microelect, Beijing 100049, Peoples R China 3.Chinese Acad Sci, Natl Space Sci Ctr, Beijing 100190, Peoples R China |
Recommended Citation GB/T 7714 | Yang, Hong,Qi, Luwei,Zhang, Yanbo,et al. Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks[J]. SCIENCE CHINA-INFORMATION SCIENCES,2020,63(2):129403. |
APA | Yang, Hong.,Qi, Luwei.,Zhang, Yanbo.,Tang, Bo.,Liu, Qianqian.,...&Ye, Tianchun.(2020).Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks.SCIENCE CHINA-INFORMATION SCIENCES,63(2),129403. |
MLA | Yang, Hong,et al."Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks".SCIENCE CHINA-INFORMATION SCIENCES 63.2(2020):129403. |
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