Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks

doi:10.1007/s11432-019-9875-2

NSSC OpenIR

	Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks
Alternative Title	WOS:000521190800001;20200408076435
	Yang, Hong 1; Qi, Luwei 1,2; Zhang, Yanbo ; Tang, Bo ; Liu, Qianqian ; Xu, Hao ; Ma, Xueli ; Wang, Xiaolei ; Li, Yongliang ; Yin, Huaxiang 1; Li, Junfeng ; Zhu, Huilong ; Zhao, Chao ; Wang, Wenwu 1; Ye, Tianchun
Source Publication	SCIENCE CHINA-INFORMATION SCIENCES
	2020
Volume	63 Issue:2 Pages:129403
DOI	10.1007/s11432-019-9875-2
ISSN	1674-733X
Language	英语
Indexed By	SCI ; EI
Citation statistics	Cited Times:1[WOS] [WOS Record] [Related Records in WOS]
Document Type	期刊论文
Identifier	http://ir.nssc.ac.cn/handle/122/7681
Collection	中国科学院国家空间科学中心
Affiliation	1.Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China 2.Univ Chinese Acad Sci, Sch Microelect, Beijing 100049, Peoples R China 3.Chinese Acad Sci, Natl Space Sci Ctr, Beijing 100190, Peoples R China
Recommended Citation GB/T 7714	Yang, Hong,Qi, Luwei,Zhang, Yanbo,et al. Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks[J]. SCIENCE CHINA-INFORMATION SCIENCES,2020,63(2):129403.
APA	Yang, Hong.,Qi, Luwei.,Zhang, Yanbo.,Tang, Bo.,Liu, Qianqian.,...&Ye, Tianchun.(2020).Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks.SCIENCE CHINA-INFORMATION SCIENCES,63(2),129403.
MLA	Yang, Hong,et al."Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks".SCIENCE CHINA-INFORMATION SCIENCES 63.2(2020):129403.

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