NSSC OpenIR
Research on the influences of well structure on dose rate effects in 65nm CMOS circuit
Alternative TitleWOS:000558628200001;20204309388824
Chen, Qian1; Han, Jianwei1; Ma, Yingqi1; Li, Sai1; Liu, Jingtian2; Chi, Yaqing2; Liang, Bin2
Source PublicationIEICE ELECTRONICS EXPRESS
2020
Volume17Issue:14Pages:20200205
DOI10.1587/elex.17.20200205
ISSN1349-2543
Language英语
Keywordwell structures CMOS dose rate effects bipolar amplification effect 130 NM COLLECTION SIMULATION TRANSISTORS UPSET
AbstractA short-time high-dose gamma ray will produce many electronhole pairs by the Compton effects in various semiconductor materials. Then pulse current will be generated in the devices and electronic system and affect their normal operation, which is called the Dose Rate Effects (DREs). Based on three-dimensional (3D) technology computer aided design (TCAD) simulations, the impacts of well structures on the DREs in 65-nm bulk CMOS inverter which is the most basic circuit unit are investigated. In this paper, the extend Gamma Radiation Model is used in simulations for effectively simulating the generation of electron-hole pairs in circuits. And present a idea for radiation hardening of bulk siliconCMOS circuits approach to DREs through optimization of well structure. The results of the simulations show that deep P-well (DPW) structure effectively reduces pulse amplitude of the voltage while the deep N-well (DNW) structure reduces the pulse amplitude only in high doping concentration. In addition, the pulse amplitude decreases with the doping concentration of deep well increasing. The mechanism is analyzed from the aspects of charge collection and potential change.
Indexed BySCI ; EI
Citation statistics
Document Type期刊论文
Identifierhttp://ir.nssc.ac.cn/handle/122/7710
Collection中国科学院国家空间科学中心
Affiliation1.Chinese Acad Sci, Natl Space Sci Ctr, Beijing 100190, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
3.Natl Univ Def Technol, Changsha 410073, Peoples R China
Recommended Citation
GB/T 7714
Chen, Qian,Han, Jianwei,Ma, Yingqi,et al. Research on the influences of well structure on dose rate effects in 65nm CMOS circuit[J]. IEICE ELECTRONICS EXPRESS,2020,17(14):20200205.
APA Chen, Qian.,Han, Jianwei.,Ma, Yingqi.,Li, Sai.,Liu, Jingtian.,...&Liang, Bin.(2020).Research on the influences of well structure on dose rate effects in 65nm CMOS circuit.IEICE ELECTRONICS EXPRESS,17(14),20200205.
MLA Chen, Qian,et al."Research on the influences of well structure on dose rate effects in 65nm CMOS circuit".IEICE ELECTRONICS EXPRESS 17.14(2020):20200205.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Chen, Qian]'s Articles
[Han, Jianwei]'s Articles
[Ma, Yingqi]'s Articles
Baidu academic
Similar articles in Baidu academic
[Chen, Qian]'s Articles
[Han, Jianwei]'s Articles
[Ma, Yingqi]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Chen, Qian]'s Articles
[Han, Jianwei]'s Articles
[Ma, Yingqi]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.