NSSC OpenIR
The Design of Terahertz Monolithic Integrated Frequency Multipliers Based on Gallium Arsenide Material
Alternative TitleWOS:000526546000047;20201508403091
Meng, Jin; Qi, Luwei1; Liu, Xiaoyu1,2; Zhou, Jingtao1; Zhang, Dehai; Jin, Zhi1
Source PublicationMICROMACHINES
2020
Volume11Issue:3Pages:336
DOI10.3390/mi11030336
Language英语
KeywordSchottky diode terahertz monolithic integrated circuit field-circuit method SCHOTTKY MODEL THZ
AbstractA global design method for a terahertz monolithic integrated frequency multiplier is proposed. Compared with a traditional independent design, the method in this paper adopts overall optimization and combines the device with the circuit design. The advantage is that it provides a customized design for frequency multipliers according to specifications. On the basis of the gallium arsenide process of the Institute of Microelectronics, Chinese Academy of Sciences, two types of Schottky diodes have been developed to meet the needs of different designs. On the one hand, a Schottky diode with a 3 mu m junction's diameter was used in the design of the 200 GHz balanced doubler and, on the other hand, a diode with a 5 mu m diameter was used in the 215 GHz unbalanced tripler. The measured results indicated that the output power of the doubler was more than 250 mu W at 180-218 GHz, and the maximum was 950 mu W at 198 GHz when driven with 12.3 mW, whereas that of the tripler was above 5 mW at 210-218 GHz and the maximum exceeded 10 mW. Such frequency multiplier sources could be widely used in terahertz imaging, radiometers, and so on.
Indexed BySCI ; EI
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Document Type期刊论文
Identifierhttp://ir.nssc.ac.cn/handle/122/7728
Collection中国科学院国家空间科学中心
Affiliation1.Chinese Acad Sci, Natl Space Sci Ctr, Key Lab Microwave Remote Sensing, Beijing 100190, Peoples R China
2.Chinese Acad Sci, Inst Microelet, Beijing 100019, Peoples R China
3.Univ Elect Sci & Technol China, Sch Elect Engn, Chengdu 611731, Peoples R China
Recommended Citation
GB/T 7714
Meng, Jin,Qi, Luwei,Liu, Xiaoyu,et al. The Design of Terahertz Monolithic Integrated Frequency Multipliers Based on Gallium Arsenide Material[J]. MICROMACHINES,2020,11(3):336.
APA Meng, Jin,Qi, Luwei,Liu, Xiaoyu,Zhou, Jingtao,Zhang, Dehai,&Jin, Zhi.(2020).The Design of Terahertz Monolithic Integrated Frequency Multipliers Based on Gallium Arsenide Material.MICROMACHINES,11(3),336.
MLA Meng, Jin,et al."The Design of Terahertz Monolithic Integrated Frequency Multipliers Based on Gallium Arsenide Material".MICROMACHINES 11.3(2020):336.
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