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Laser-Induced Micro SEL Characterization of SRAM Devices | |
Alternative Title | WOS:000520416900038 |
Ma Yingqi; Han Jianwei; Shipeng, Shangguan1; Xiang, Zhu1; Rui, Chen | |
Source Publication | 2019 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW) |
2019 | |
Pages | 207-209 |
Language | 英语 |
ISSN | 2154-0519 |
ISBN | 978-1-7281-3828-2 |
Abstract | This paper presents micro single event latch-up characterization of SRAM by laser backside testing. The SEL threshold and the detailed micro SEL features have been investigated by laser automatic scanning experiment. The micro SEL results can give the reference for the hardness assurance in circuit system level. |
Keyword | COTS Micro SEL Pulsed Laser Backside Hardness Assurance |
Conference Name | IEEE Radiation Effects Data Workshop (REDW) |
Conference Date | JUL 08-12, 2019 |
Conference Place | San Antonio, TX |
Indexed By | CPCI |
Document Type | 会议论文 |
Identifier | http://ir.nssc.ac.cn/handle/122/7809 |
Collection | 中国科学院国家空间科学中心 |
Affiliation | 1.Chinese Acad Sci, Natl Space Sci Ctr, Beijing 100190, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
Recommended Citation GB/T 7714 | Ma Yingqi,Han Jianwei,Shipeng, Shangguan,et al. Laser-Induced Micro SEL Characterization of SRAM Devices[C],2019:207-209. |
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