Laser-Induced Micro SEL Characterization of SRAM Devices

NSSC OpenIR

	Laser-Induced Micro SEL Characterization of SRAM Devices
Alternative Title	WOS:000520416900038
	Ma Yingqi ; Han Jianwei ; Shipeng, Shangguan 1; Xiang, Zhu 1; Rui, Chen
Source Publication	2019 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW)
	2019
Pages	207-209
Language	英语
ISSN	2154-0519
ISBN	978-1-7281-3828-2
Abstract	This paper presents micro single event latch-up characterization of SRAM by laser backside testing. The SEL threshold and the detailed micro SEL features have been investigated by laser automatic scanning experiment. The micro SEL results can give the reference for the hardness assurance in circuit system level.
Keyword	COTS Micro SEL Pulsed Laser Backside Hardness Assurance
Conference Name	IEEE Radiation Effects Data Workshop (REDW)
Conference Date	JUL 08-12, 2019
Conference Place	San Antonio, TX
Indexed By	CPCI
Document Type	会议论文
Identifier	http://ir.nssc.ac.cn/handle/122/7809
Collection	中国科学院国家空间科学中心
Affiliation	1.Chinese Acad Sci, Natl Space Sci Ctr, Beijing 100190, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
Recommended Citation GB/T 7714	Ma Yingqi,Han Jianwei,Shipeng, Shangguan,et al. Laser-Induced Micro SEL Characterization of SRAM Devices[C],2019:207-209.

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