NSSC OpenIR
Laser-Induced Micro SEL Characterization of SRAM Devices
Alternative TitleWOS:000520416900038
Ma Yingqi; Han Jianwei; Shipeng, Shangguan1; Xiang, Zhu1; Rui, Chen
Source Publication2019 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW)
2019
Pages207-209
Language英语
ISSN2154-0519
ISBN978-1-7281-3828-2
AbstractThis paper presents micro single event latch-up characterization of SRAM by laser backside testing. The SEL threshold and the detailed micro SEL features have been investigated by laser automatic scanning experiment. The micro SEL results can give the reference for the hardness assurance in circuit system level.
KeywordCOTS Micro SEL Pulsed Laser Backside Hardness Assurance
Conference NameIEEE Radiation Effects Data Workshop (REDW)
Conference DateJUL 08-12, 2019
Conference PlaceSan Antonio, TX
Indexed ByCPCI
Document Type会议论文
Identifierhttp://ir.nssc.ac.cn/handle/122/7809
Collection中国科学院国家空间科学中心
Affiliation1.Chinese Acad Sci, Natl Space Sci Ctr, Beijing 100190, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Ma Yingqi,Han Jianwei,Shipeng, Shangguan,et al. Laser-Induced Micro SEL Characterization of SRAM Devices[C],2019:207-209.
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