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SEE Characteristics of COTS Devices by 1064nm Pulsed Laser Backside Testing 会议论文
2018 IEEE Nuclear and Space Radiation Effects Conference, NSREC 2018, Waikoloa, HI, United states, July 16, 2018 - July 20, 2018
Authors:  Ma, Yingqi;  Han, Jianwei;  Shangguan, Shipeng;  Chen, Rui;  Zhu, Xiang;  Li, Yue;  Zhan, Yueying
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一种密码芯片的安全检测方法及其装置 专利
申请日期: 2017-12-27, 公开日期: 2018-06-15
Authors:  朱翔;   韩建伟;   马英起;   上官士鹏;   李悦
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Primary investigation the impacts of the external memory (DDR3) failures on the performance of Xilinx Zynq-7010 SoC based system (MicroZed) using laser irradiation 期刊论文
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 2017
Authors:  Liu Shuhuan;  Du Xuecheng;  Du Xiaozhi;  Zhang Yao;  Mubashiru Lawal Olarewaju;  Luo Dongyang;  yuan Yuan;  Deng Tianxiang;  Li Zhuoqi;  Zang Hang;  Li Yonghong;  He Chaohui;  Ma Yingqi;  Shangguan Shipeng;  Liu, Shuhuan (shuhuanliu@126.com)
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Continuous Wave Lasers  Digital Storage  Failure Modes  Irradiation  Laser Beam Effects  System-on-chip  
Comparison of single-event upset generated by heavy ion and pulsed laser 期刊论文
Science China Information Sciences, 2017, 卷号: 60, 期号: 7
Authors:  Liang, Bin;  Song, Ruiqiang;  Han, Jianwei;  Chi, Yaqing;  Chen, Rui;  Hu, Chunmei;  Chen, Jianjun;  Ma, Yingqi;  Shangguan, Shipeng;  Liang, Bin (liangbin110@126.com)
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Comparison of radiation-induced charge sharing generated by heavy ion and pulsed laser 会议论文
Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS, Bremen, Germany, September 19, 2016 - September 23, 2016
Authors:  Song, Ruiqiang;  Chen, Shuming;  Han, Jianwei;  Chi, Yaqing;  Chen, Rui;  Liang, Bin;  Huang, Pengcheng;  Ma, Yingqi;  Shangguan, Shipeng
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运算放大器单粒子瞬态脉冲效应试验评估及防护设计 期刊论文
空间科学学报, 2017, 卷号: 37, 期号: 2, 页码: 222-228
Authors:  程佳;  马英起;  韩建伟;  朱翔;  上官士鹏;  陈睿
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单粒子瞬态脉冲效应  脉冲激光  试验评估  减缓电路  
一种用于半导体器件材料厚度的光学测量方法 专利
专利类型: 发明专利, 申请日期: 2015-08-24,
Authors:  封国强;  马英起;  韩建伟;  上官士鹏;  朱翔;  陈睿
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一种暴露芯片衬底面的封装方法 专利
专利类型: 发明专利, 申请日期: 2015-08-24,
Authors:  封国强;  上官士鹏;  韩建伟;  马英起;  朱翔;  陈睿
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一种用于半导体器件材料吸收系数的光学测量方法 专利
专利类型: 发明专利, 申请日期: 2015-08-24,
Authors:  封国强;  马英起;  韩建伟;  上官士鹏;  朱翔;  陈睿
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一种用于半导体器件材料反射率的光学测量方法 专利
专利类型: 发明专利, 申请日期: 2015-07-21,
Authors:  封国强;  马英起;  韩建伟;  上官士鹏;  朱翔;  陈睿
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