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一种多类型器件单粒子效应统筹监测系统及监测方法 专利
申请日期: 2020-01-01, 公开日期: 2020
Authors:  李悦;  朱翔;  马英起;  陈睿;  上官士鹏;  韩建伟
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Research on the influences of well structure on dose rate effects in 65nm CMOS circuit 期刊论文
IEICE ELECTRONICS EXPRESS, 2020, 卷号: 17, 期号: 14, 页码: 20200205
Authors:  Chen, Qian;  Han, Jianwei;  Ma, Yingqi;  Li, Sai;  Liu, Jingtian;  Chi, Yaqing;  Liang, Bin
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well structures  CMOS  dose rate effects  bipolar amplification effect  130 NM  COLLECTION  SIMULATION  TRANSISTORS  UPSET  
Study on the single-event upset sensitivity of 65-nm CMOS sequential logic circuit 期刊论文
IEICE ELECTRONICS EXPRESS, 2020, 卷号: 17, 期号: 10, 页码: 20200102
Authors:  Li, Sai;  Han, Jianwei;  Chen, Rui;  Shangguan, Shipeng;  Ma, Yingqi;  Wang, Xuan
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pulsed laser  single-event-upset (SEU)  voltage  frequency  circuit architecture  SOFT ERROR RATES  SEU  IMPACT  BULK  
The analogue experiment of small space debris impact inducing solar array discharge 期刊论文
INTERNATIONAL JOURNAL OF IMPACT ENGINEERING, 2020, 卷号: 143, 页码: 103582
Authors:  Li, Hongwei;  Han, Jianwei;  Cai, Minghui;  Tao, Mengze
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Small space debris  Discharge  Solar array  PLASMA  
激光模拟瞬态剂量率闩锁效应电流特征机制研究 期刊论文
物理学报, 2019, 卷号: 68, 期号: 12, 页码: 124202
Authors:  陈钱;  马英起;  陈睿;  朱翔;  李悦;  韩建伟
View  |  Adobe PDF(1482Kb)  |  Favorite  |  View/Download：81/10  |  Submit date：2019/08/26
瞬态剂量率效应  闩锁效应  脉冲激光      
130nm体硅反相器链的单粒子瞬态脉宽特性研究 期刊论文
北京航空航天大学学报, 2019, 卷号: 45, 期号: 6, 页码: 1137-1144
Authors:  李赛;  陈睿;  韩建伟
View  |  Adobe PDF(574Kb)  |  Favorite  |  View/Download：69/14  |  Submit date：2019/12/17
单粒子瞬态(SET)  反相器  CMOS 工艺  重离子  脉冲激光  
A single event upset hardened flip-flop design utilizing layout technique 期刊论文
Microelectronics Reliability, 2019, 卷号: 102
Authors:  Wang, Haibin;  Chu, Jiamin;  Wei, Jinghe;  Shi, Junwei;  Sun, Hongwen;  Han, Jianwei;  Qian, Rong
View  |  Adobe PDF(1431Kb)  |  Favorite  |  View/Download：73/21  |  Submit date：2019/12/17
The threshold voltage degradation of MOSFET in heavy-ion single event effect test 会议论文
2018 International Conference on Radiation Effects of Electronic Devices, ICREED 2018, Beijing, China, May 16, 2018 - May 18, 2018
Authors:  Zhang, Zeming;  Ma, Yingqi;  Li, Dan;  Tong, Chao;  Guo, Xiaoxiao;  Han, Jianwei;  Dang, Wei
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0.13 mum部分耗尽SOI工艺反相器链SET脉宽传播 期刊论文
北京航空航天大学学报, 2019, 卷号: 45, 期号: 11, 页码: 2193-2198; AR:1001-5965(2019)45:11<2193:01MBFH>2.0.TX;2-#
Authors:  上官士鹏;  朱翔;  陈睿;  马英起;  李赛;  韩建伟
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部分耗尽绝缘体上硅(PD-SOI)  重离子加速器  脉冲激光  有效能量  脉冲宽度  双极放大  partial depleted silicon-on-insulator (PD-SOI)  heavy ion accelerator  pulsed laser  effective energy  pulse width  bipolar amplification  
Laser-Induced Micro SEL Characterization of SRAM Devices 会议论文
2019 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW), San Antonio, TX, JUL 08-12, 2019
Authors:  Ma Yingqi;  Han Jianwei;  Shipeng, Shangguan;  Xiang, Zhu;  Rui, Chen
Favorite  |  View/Download：19/0  |  Submit date：2020/12/28
COTS  Micro SEL  Pulsed Laser  Backside  Hardness Assurance