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一种多类型器件单粒子效应统筹监测系统及监测方法 专利
申请日期: 2020-01-01, 公开日期: 2020
Authors:  李悦;  朱翔;  马英起;  陈睿;  上官士鹏;  韩建伟
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Research on the influences of well structure on dose rate effects in 65nm CMOS circuit 期刊论文
IEICE ELECTRONICS EXPRESS, 2020, 卷号: 17, 期号: 14, 页码: 20200205
Authors:  Chen, Qian;  Han, Jianwei;  Ma, Yingqi;  Li, Sai;  Liu, Jingtian;  Chi, Yaqing;  Liang, Bin
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well structures  CMOS  dose rate effects  bipolar amplification effect  130 NM  COLLECTION  SIMULATION  TRANSISTORS  UPSET  
Study on the single-event upset sensitivity of 65-nm CMOS sequential logic circuit 期刊论文
IEICE ELECTRONICS EXPRESS, 2020, 卷号: 17, 期号: 10, 页码: 20200102
Authors:  Li, Sai;  Han, Jianwei;  Chen, Rui;  Shangguan, Shipeng;  Ma, Yingqi;  Wang, Xuan
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pulsed laser  single-event-upset (SEU)  voltage  frequency  circuit architecture  SOFT ERROR RATES  SEU  IMPACT  BULK  
Detecting dark photon dark matter with Gaia-like astrometry observations 期刊论文
JOURNAL OF COSMOLOGY AND ASTROPARTICLE PHYSICS, 2019, 期号: 5, 页码: 15
Authors:  Guo, Huai-Ke;  Ma, Yingqi;  Shu, Jing;  Xue, Xiao;  Yuan, Qiang;  Zhao, Yue
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cosmology of theories beyond the SM  dark matter experiments  particle physics - cosmology connection  stars  
激光模拟瞬态剂量率闩锁效应电流特征机制研究 期刊论文
物理学报, 2019, 卷号: 68, 期号: 12, 页码: 124202
Authors:  陈钱;  马英起;  陈睿;  朱翔;  李悦;  韩建伟
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瞬态剂量率效应  闩锁效应  脉冲激光      
The threshold voltage degradation of MOSFET in heavy-ion single event effect test 会议论文
2018 International Conference on Radiation Effects of Electronic Devices, ICREED 2018, Beijing, China, May 16, 2018 - May 18, 2018
Authors:  Zhang, Zeming;  Ma, Yingqi;  Li, Dan;  Tong, Chao;  Guo, Xiaoxiao;  Han, Jianwei;  Dang, Wei
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0.13 mum部分耗尽SOI工艺反相器链SET脉宽传播 期刊论文
北京航空航天大学学报, 2019, 卷号: 45, 期号: 11, 页码: 2193-2198; AR:1001-5965(2019)45:11<2193:01MBFH>2.0.TX;2-#
Authors:  上官士鹏;  朱翔;  陈睿;  马英起;  李赛;  韩建伟
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部分耗尽绝缘体上硅(PD-SOI)  重离子加速器  脉冲激光  有效能量  脉冲宽度  双极放大  partial depleted silicon-on-insulator (PD-SOI)  heavy ion accelerator  pulsed laser  effective energy  pulse width  bipolar amplification  
Laser-Induced Micro SEL Characterization of SRAM Devices 会议论文
2019 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW), San Antonio, TX, JUL 08-12, 2019
Authors:  Ma Yingqi;  Han Jianwei;  Shipeng, Shangguan;  Xiang, Zhu;  Rui, Chen
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COTS  Micro SEL  Pulsed Laser  Backside  Hardness Assurance  
SEE Characteristics of COTS Devices by 1064nm Pulsed Laser Backside Testing 会议论文
2018 IEEE Nuclear and Space Radiation Effects Conference, NSREC 2018, Waikoloa, HI, United states, July 16, 2018 - July 20, 2018
Authors:  Ma, Yingqi;  Han, Jianwei;  Shangguan, Shipeng;  Chen, Rui;  Zhu, Xiang;  Li, Yue;  Zhan, Yueying
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一种密码芯片的安全检测方法及其装置 专利
申请日期: 2017-12-27, 公开日期: 2018-06-15
Authors:  朱翔;   韩建伟;   马英起;   上官士鹏;   李悦
Adobe PDF(1516Kb)  |  Favorite  |  View/Download:223/49  |  Submit date:2019/02/22